Particle beam biaxial orientation of a substrate for epitaxial crystal growth
US6821338B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 15, 2000 |
| Grant date | Nov 23, 2004 |
| Priority date | — |
| Expiry date | Apr 5, 2021 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B33/04
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The invention provides a method of increasing the extent of a desired biaxial orientation of a previously formed non-single-crystal structure by contacting said structure with an oblique particle beam thereby forming in the structure a nucleating surface having increased desired biaxial orientation. The method can further include a step of epitaxially growing the crystalline formation using the nucleating surface to promote the epitaxial growth. The invention also provides a crystalline structure containing a nucleating surface formed by contacting a previously formed non-single-crystal structure with an oblique particle beam, from 0 to 10 adjacent orientation-transmitting layers, and a crystalline active layer. In this structure, the active layer is oriented in registry with the nucleating surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.