Patent · US Expired

Lithography process for patterning HgI2 photonic devices

US6821714B1 · kind B1 · utility

3Cited by

3References

34Claims

0Family size

Assignee

Sandia National Laboratory · US

Inventors

Mark J. Mescher · Newton, US
Ralph B. James · Ridge, US
Haim Hermon · Jerusalem, IL

Key dates

Filing date	Nov 13, 2000
Grant date	Nov 23, 2004
Priority date	—
Expiry date	Mar 6, 2023

Classification

Technology area (CPC G)Physics
CPC primaryG03F7/11
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A photolithographic process forms patterns on HgI2 surfaces and defines metal sublimation masks and electrodes to substantially improve device performance by increasing the realizable design space. Techniques for smoothing HgI2 surfaces and for producing trenches in HgI2 are provided. A sublimation process is described which produces etched-trench devices with enhanced electron-transport-only behavior.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.