Patent · US Expired

Organic thin film transistor and method of manufacturing the same, and semiconductor device having the organic thin film transistor

US6821811B2 · kind B2 · utility

22Cited by
17References
24Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 29, 2003
Grant dateNov 23, 2004
Priority date
Expiry dateJul 29, 2023

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10K85/1135

Abstract

There have been problems in that a dedicated apparatus is needed for a conventional method of manufacturing an organic thin film transistor and in that: a little amount of an organic semiconductor film is formed with respect to a usage amount of a material; and most of the used material is discarded. Further, apparatus maintenance such as cleaning of the inside of an apparatus cup or chamber has needed to be frequently carried out in order to remove the contamination resulting from the material that is wastefully discarded. Therefore, a great cost for materials and man-hours for maintenance of apparatus have been required. In the present invention, a uniform organic semiconductor film is formed by forming an aperture between a first substrate for forming the organic semiconductor film and a second substrate used for injection with an insulating film formed at a specific spot and by injecting an organic semiconductor film material into the aperture due to capillarity to the aperture. The insulating film formed at the specific spot enables formation of the organic semiconductor film with high controllability. Further, the insulating film can also serve as a spacer that holds the aper…

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.