Patent · US Expired

Method for making an integrated optical circuit

US6821903B2 · kind B2 · utility

7Cited by
3References
24Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 5, 2000
Grant dateNov 23, 2004
Priority date
Expiry dateJun 19, 2022

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG02B2006/12176
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

In order to manufacture an integrated optical circuit, a first mask is formed on a first region of a substrate and defines the shape of at least one optical device (such as a waveguide). A second mask is formed on a second region of the substrate and corresponds to an optical structure (such as a periodic array structure or photonic crystal) to be formed in a second region of the substrate distinct from the first region. The first mask and the second mask are each made of a material which substantially resists a predetermined etching gas. The second mask may formed, patterned, and etched without adversely affecting the characteristics of the first mask.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.