In-situ method for producing a hydrogen terminated hydrophobic surface on a silicon wafer
US6821908B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 10, 2001 |
| Grant date | Nov 23, 2004 |
| Priority date | — |
| Expiry date | Jan 19, 2022 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB08B3/08
- WIPO fieldChemical engineering
- WIPO sectorChemistry
Abstract
At least one silicon wafer is loaded into a closed vessel that contains a first solution that includes ammonium hydroxide, hydrogen peroxide and DI water. This acidic solution is removed from the vessel and DI water is introduced into the vessel until wafers are completely immersed. The DI water is then removed from the vessel and a second solution that includes hydrofluoric acid, hydrochloric acid solution and DI water is added to the vessel to fully immerse the wafer. The second solution is then removed from the vessel, and as the second solution is being drained from the vessel, an alcohol solution in a hot and low-pressure nitrogen carrier gas is introduced to the vessel, such that as the level of the liquid within the vessel falls below the height of the wafer within the vessel, the surface of the wafer is dried due to surface tension. The thin coating of alcohol solvent on the wafer ensures that the surface of the wafer is hydrogen terminated, thus hydrophobic. The technique of the present invention occurs in a single vessel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.