Semiconductor memory including forming beams connecting the capacitors
US6822280B2 · kind B2 · utility
42Cited by
1References
11Claims
0Family size
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Key dates
| Filing date | Nov 4, 2002 |
| Grant date | Nov 23, 2004 |
| Priority date | — |
| Expiry date | Nov 4, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/10
Abstract
A semiconductor memory incorporates cylinder-type stacked capacitors. Each capacitor has a lower electrode and an upper electrode facing each other via a dielectric film. The lower electrode of each capacitor is supported by a beam-like insulator at a side portion of the electrode, the side portion being apart from a lower edge of the lower electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.