Regulation method for the source terminal voltage in a non-volatile memory cell during a program phase and corresponding program circuit
US6822905B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 27, 2002 |
| Grant date | Nov 23, 2004 |
| Priority date | — |
| Expiry date | Dec 27, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/30
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method and a circuit are for regulating the source terminal voltage of a non-volatile memory cell during the cell programming and/or reading phases. The method includes a phase of locally regulating the voltage value and includes comparing the source current of the cell array with a reference current. A fraction of the source current is converted to a voltage and compared with a voltage generated from a memory cell acting as a reference and being programmed to the distribution with the highest current levels. The comparison may be used for controlling a current generator to inject, into the source terminal, the current necessary to keep the predetermined voltage thereof at a constant value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.