Tunable semiconductor laser with integrated wideband reflector
US6822980B2 · kind B2 · utility
5Cited by
1References
53Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 25, 2001 |
| Grant date | Nov 23, 2004 |
| Priority date | — |
| Expiry date | Nov 11, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/1209
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A wide band reflector, for example a wideband grating reflector is provided as the output coupler of a semiconductor laser. This permits the semiconductor laser to be integrated with other components on a single semiconductor substrate, if desired, without requiring that the laser beam be emitted from the tuning element. Thus, the laser can be tuned over a wide bandwidth with efficient power extraction and high wavelength selectivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.