Patent · US Expired

Hybrid multiplexer/demultiplexer

US6823112B2 · kind B2 · utility

21Cited by
61References
15Claims
0Family size

Assignee

Inventor

Key dates

Filing dateFeb 20, 2002
Grant dateNov 23, 2004
Priority date—
Expiry dateAug 11, 2022

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG02F2201/20
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A method for forming a hybrid active electronic and optical circuit using a lithography mask. The hybrid active electronic and optical circuit comprising an active electronic device and at least one optical device on a Silicon-On-Insulator (SOI) wafer. The SOI wafer including an insulator layer and an upper silicon layer. The upper silicon layer including at least one component of the active electronic device and at least one component of the optical device. The method comprising projecting the lithography mask onto the SOI waver in order to simultaneously pattern the component of the active electronic device and the component of the optical device on the SOI wafer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.