CMP polisher substrate removal control mechanism and method
US6824448B1 · kind B1 · utility
6Cited by
10References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 31, 2001 |
| Grant date | Nov 30, 2004 |
| Priority date | — |
| Expiry date | Nov 21, 2021 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB24B53/017
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A slurry removal control mechanism for a CMP polisher is provided. After slurry dispense has been terminated, a high pressure fluid spray removes the slurry from the polishing pad, while the plated causes the pad to rotate at a high rpm rate, thus clearing the slurry from contact with the wafer. Additionally, there is provided a slurry dispense bar including high pressure spray nozzles for providing a high pressure spray upon slurry dispense termination.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.