Semiconductor device with selectively diffused regions
US6825104B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 27, 2003 |
| Grant date | Nov 30, 2004 |
| Priority date | — |
| Expiry date | Feb 12, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention describes a method of manufacturing a semiconductor device, comprising a semiconductor substrate in the shape of a slice, the method comprising the steps of: step 1) selectively applying a pattern of a solids-based dopant source to a first major surface of said semiconducting substrate; step 2) diffusing the dopant atoms from said solids-based dopant source into said substrate by a controlled heat treatment step in a gaseous environment surrounding said semi-conducting substrate, the dopant from said solids-based dopant source diffusing directly into said substrate to form a first diffusion region and, at the same time, diffusing said dopant from said solids-based dopant source indirectly via said gaseous environment into said substrate to form a second diffusion region in at least some areas of said substrate to form a second diffusion region in at least some areas of said substrate not covered by said pattern; and step 3) forming a metal contact pattern substantially in alignment with said first diffusion region without having etched said second diffusion region substantially.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.