Computer-implemented reflectance system and method for non-destructive low dose ion implantation monitoring
US6825933B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 7, 2002 |
| Grant date | Nov 30, 2004 |
| Priority date | — |
| Expiry date | Aug 14, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N21/9501
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Embodied in a reflectance system capable of providing high resolution, repeatable, efficient, and accurate reflectance measurements of a silicon or silicon-oxide wafer at all wavelengths, the present invention, including an inventive and useful software tool with user interface, provides a solution to monitor non-destructively low dose ion implantation without potentially suffering from undesirable annealing effect. The computer-implemented method disclosed herein determines a reflectance change index that correlates to the ion dose. The reflectance change index is determined based on an absolute value of reflectance changes over the entire measured spectra. The reflectance changes are determined based on non-implanted and implanted reflectance measurements of the wafer respectively obtained at each of the wavelengths.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.