Semiconductor laser and method of production thereof
US6826216B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 22, 2001 |
| Grant date | Nov 30, 2004 |
| Priority date | — |
| Expiry date | Apr 17, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3202
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A window structure type AlGaInP semiconductor laser able to suppress abnormal growth in the vicinity of a ridge and having good surface morphology, wherein a least one step-like structure is provided on a substrate having a surface tilted to a [0-1-1] direction from a (100) plane, a semiconductor stack is formed on the substrate and comprises an active layer including two types of Group III elements including at least indium (In) and Group V elements including phosphorus (P), a cladding layer of a first conductivity, a cladding layer of a second conductivity, end surfaces of an active layer serve as end surfaces of a resonator, a light guide is formed between and the end surfaces of the resonator, and the light guide is arranged at an upper step side of the step-like structure so that a portion of the light guide not including resonator end surfaces is positioned in the vicinity of the step-like structure and so that the resonator end surface portions of the light guide are farther from the step-like structure, and a method of production thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.