Semiconductor saturable absorber device, and laser
US6826219B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 14, 2002 |
| Grant date | Nov 30, 2004 |
| Priority date | — |
| Expiry date | Mar 14, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S3/08059
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
According to the invention, a semiconductor saturable absorber mirror device for reflecting at least a proportion of electromagnetic radiation of essentially one given optical frequency impinging on said device, comprises a substrate with a Bragg reflector, and on top of this Bragg reflector a layered structure with at least one layer with saturably absorbing semiconductor material. A low index dielectric coating layer is placed on said outermost surface of said structure. The Bragg reflector and said layered structure are designed in a manner that the field intensity of radiation of said given frequency takes up a maximum at or near the interface between said structure and said dielectric material. The thickness of said dielectric coating layer may be varied and may for example be a quarter of a wavelength of said electromagnetic radiation in the dielectric material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.