Method for measuring the etching speed
US6828164B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 1, 2003 |
| Grant date | Dec 7, 2004 |
| Priority date | — |
| Expiry date | Apr 1, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/34
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The specification discloses a structure and method for measuring the etching speed. A test layer is connected with several resistors. Etching the metal layer disconnects in order the resistors from the circuit. The equivalent resistance of the sensing resistor system is measured to obtain the etching speed. In consideration of the errors of the resistors, the invention also provides a structure that utilizes an IC layout technique to put an interdigitized dummy resistor beside the sensing resistors. By taking the ratio of the equivalent resistance of the sensing resistors and the dummy resistor, the invention can compute to obtain the etching speed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.