Method to improve STI nano gap fill and moat nitride pull back
US6828213B2 · kind B2 · utility
3Cited by
7References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 28, 2003 |
| Grant date | Dec 7, 2004 |
| Priority date | — |
| Expiry date | Feb 28, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76235
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of improving shallow trench isolation (STI) gap fill and moat nitride pull back is provided by after the steps of growing a pad oxide, depositing a nitride layer on the pad oxide and the steps of moat patterning, moat etching and moat clean, the steps of growing thermal oxide, deglazing a part of a part of the moat nitride; depositing a thin nitride liner, etching the nitride to form a thin side wall nitride in the STI trench; and performing an oxide Hydroflouric (HF) acid deglazing before STI liner oxidating and depositing oxide to fill the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.