Method of forming a thin film using atomic layer deposition
US6828218B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 31, 2001 |
| Grant date | Dec 7, 2004 |
| Priority date | — |
| Expiry date | Nov 20, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1008
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method of forming a thin film using atomic layer deposition (ALD). An ALD reactor having a single reaction space is provided. A batch of substrates is concurrently loaded into the single reaction space of the ALD reactor.Then, a gas containing reactants is introduced into the single reaction space, and a portion of the reactants is chemisorbed on top surfaces of the batch of substrates within the single reaction space. Non-chemically adsorbed reactants are then removed from the single reaction space.In accordance with one embodiment of the present invention, after introducing the gas containing reactants, non-chemically adsorbed reactants are diluted in the single reaction space to facilitate the removal of non-chemically adsorbed reactants.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.