Injection lasers fabricated from semiconducting polymers

US6828583B2 · kind B2 · utility

Assignee

• The Regents of the University of California · US

Inventors

• Alan J. Heeger · Lompoc, US
• Marc Pauchard-Strebel · Fribourg, CH
• Martin Vehse · Dresden, DE
• Ludvig Edman · Osaka, JP
• Daniel Moses · San Diego, US

Key dates

• Filing date: Mar 9, 2004
• Grant date: Dec 7, 2004
• Expiry date: Mar 9, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S5/3211
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A solid state lasing structure comprising a field effect transistor in which source and drain electrodes are disposed on a semiconducting light emitting organic polymer forming an active layer on a gate whereby current between the source and drain electrodes defines and flows along a channel in the active layer to define a recombination and emission zone.