Semiconductor device and manufacturing method for the same
US6830978B2 · kind B2 · utility
4Cited by
4References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 20, 2003 |
| Grant date | Dec 14, 2004 |
| Priority date | — |
| Expiry date | Aug 20, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
On a semiconductor substrate having a gate electrode and an LDD layer formed thereon, an SiN film to be a silicide block is formed. An opening communicating with the LDD layer is provided for the SiN film. Impurities are introduced into the LDD layer through the opening to form a source/drain layer, and the surface thereof is silicided to form a silicide film. Next, an interlayer insulation film of SiO2 is formed and then etched under a condition of an etching rate of SiO2 higher than that of SiN to form a contact hole reaching the LDD layer from the upper surface of the interlayer insulation film via the opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.