Diffusion barrier layer for semiconductor device and fabrication method thereof
US6831362B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 15, 2002 |
| Grant date | Dec 14, 2004 |
| Priority date | — |
| Expiry date | Oct 15, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a diffusion barrier layer for a semiconductor device and fabrication method thereof. The diffusion barrier layer according to the present invention is fabricated by forming a diffusion barrier layer containing a refractory metal material and an insulating material on an insulating layer and in a contact hole, wherein the insulating layer being partially etched to form the contact hole, is formed on a semiconductor substrate; and annealing the diffusion barrier layer. Therefore, an object of the present invention is to provide a diffusion barrier layer for a semiconductor device, which is of an amorphous or microcrystalline state and thermodynamically stable even at a high temperature since an insulating material is bonded to a refractory metal material in the diffusion barrier layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.