Image sensor with photosensitive thin film transistors and dark current compensation
US6831710B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 9, 2003 |
| Grant date | Dec 14, 2004 |
| Priority date | — |
| Expiry date | Jun 23, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/18
Abstract
An image sensor array includes image sensors having photo TFTs to generate photocurrent in response to received images. The photo TFTs each have their respective gate electrodes shorted to source electrodes to increase generated photocurrent. Each photo TFT is coupled to a reference TFT to compensate for dark current in a corresponding photo TFT. Storage capacitors are coupled to each photo TFT and discharged upon generation of a photocurrent. Each storage capacitor is coupled to a readout TFT that passes a current from the storage capacitor to a data line. Data lines indicate location of the received image on the image sensor array.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.