Parallel and selective growth method of carbon nanotube on the substrates for electronic-spintronic device applications
US6833558B2 · kind B2 · utility
99Cited by
1References
16Claims
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Key dates
| Filing date | Aug 22, 2001 |
| Grant date | Dec 21, 2004 |
| Priority date | — |
| Expiry date | Jul 1, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/842
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A selective and parallel growth method of carbon nanotube for electronic-spintronic device applications which directly grows a carbon nanotube on a wanted position toward a horizontal direction comprises the steps of: forming an insulating film on a board; forming fine patterns of catalyst metal layer including a contact electrode pad on the insulating film, forming a growth barrier layer for preventing vertical growth on upper part of the catalyst metal layer; and directly growing the carbon nanotube between the catalyst patterns.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.