Self-light-emitting device and method of manufacturing the same
US6833560B2 · kind B2 · utility
106Cited by
33References
62Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 13, 2001 |
| Grant date | Dec 21, 2004 |
| Priority date | — |
| Expiry date | Feb 13, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K2102/351
Abstract
Failure light emission of an EL element due to failure film formation of an organic EL material in an electrode hole 46 is improved. By forming the organic EL material after embedding an insulator in an electrode hole 46 on a pixel electrode and forming a protective portion 41b, failure film formation in the electrode hole 46 can be prevented. This can prevent concentration of electric current due to a short circuit between a cathode and an anode of the EL element, and can prevent failure light emission of an EL layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.