Storage capacitor structure for LCD and OELD panels
US6833561B2 · kind B2 · utility
3Cited by
11References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 1, 2002 |
| Grant date | Dec 21, 2004 |
| Priority date | — |
| Expiry date | Nov 1, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02672
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a structure and a fabrication method of a storage capacitor used in the pixel region of a display panel such as LCD or OELD. The present invention simultaneously forms a poly-crystalline silicon TFT and a storage capacitor in the pixel region of a display panel using MILC phenomena. By applying MILC inducing metal along at least two edges of storage capacitor, the time required to crystallize the silicon layer in storage capacitor region may be significantly reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.