Indium gallium nitride separate confinement heterostructure light emitting devices

US6833564B2 · kind B2 · utility

Assignee

• Lumileds Lighting US, LLC · US

Inventors

• Yu-Chen Shen · Sunnyvale, US
• Mira S. Misra · Los Gatos, US

Key dates

• Filing date: Nov 2, 2001
• Grant date: Dec 21, 2004
• Expiry date: Nov 2, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/81

Abstract

A III-nitride light emitting device including a substrate, a first conductivity type layer overlying the substrate, a spacer layer overlying the first conductivity type layer, an active region overlying the spacer layer, a cap layer overlying the active region, and a second conductivity type layer overlying the cap layer is disclosed. The active region includes a quantum well layer and a barrier layer containing indium. The barrier layer may be doped with a dopant of first conductivity type and may have an indium composition between 1% and 15%. In some embodiments, the light emitting device includes an InGaN lower confinement layer formed between the first conductivity type layer and the active region. In some embodiments, the light emitting device includes an InGaN upper confinement layer formed between the second conductivity type layer and the active region. In some embodiments, the light emitting device includes an InGaN cap layer formed between the upper confinement layer and the active region.