Semiconductor imaging device having a refractive index matching layer
US6833601B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 31, 2003 |
| Grant date | Dec 21, 2004 |
| Priority date | — |
| Expiry date | Jan 31, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/413
Abstract
A semiconductor device includes a plurality of photoelectric conversion photodiodes provided on a silicon substrate, and a refractive index matching film provided on each of the photodiodes. The refractive index matching film is composed of an insulating compound layer represented by SiOxNy (0≦x and y) assuming that the molar ratio of silicon, oxygen and nitrogen of the compound layer is 1:x:y. The oxygen content of the compound layer is the lowest at the silicon interface with each photodiode and the highest in an upper portion of the compound layer, and the nitrogen content is the highest at the silicon interface with each photodiode and the lowest in the upper portion of the compound layer. Therefore, multiple reflection can be decreased to improve light receiving sensitivity, as compared with a case in which a SiN single layer and a SiO2 single layer are laminated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.