Composite material including copper and cuprous oxide and application thereof
US6833617B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 12, 2003 |
| Grant date | Dec 21, 2004 |
| Priority date | — |
| Expiry date | Feb 12, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3511
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
It is an object of the present invention to provide a composite material having low thermal expansivity, high thermal conductivity, and good plastic workability, which is applied to semiconductor devices and many other uses.The composite material is composed of metal and inorganic particles having a smaller coefficient of thermal expansion than said metal. It is characterized in that said inorganic particles disperse in such a way that 95% or more of them (in terms of their area in cross-section) form aggregates of complex configuration joining together.The composite material contains 20-80 vol % of copper oxide, with the remainder being copper. It has a coefficient of thermal expansion of 5×10−6 to 14×10−6/° C. and thermal conductivity of 30-325 W/m·K in the range of room temperature to 300° C. It is suitable for the radiator plate of semiconductor devices and the dielectric plate of electrostatic attractors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.