SOI-LDMOS device with integral voltage sense electrodes
US6833726B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 13, 2004 |
| Grant date | Dec 21, 2004 |
| Priority date | — |
| Expiry date | Feb 13, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
The present invention provides a semiconductor device of the SOI-LDMOS type in which the field plate is divided into a plurality of electrically isolated sub-field plates. At least two of the divided sub-field plates are connected to external circuits for reading their respective output voltages. By connecting a first external circuit and a second external circuit having specific components, one is configured for determining an instantaneous output voltage and the other is configured for determining a change in output voltage as a function of time. Power is disconnected from the semiconductor device if either the instantaneous voltage or the derivative of voltage over time exceeds an established value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.