Content addressable memory with PFET passgate SRAM cells
US6834003B2 · kind B2 · utility
6Cited by
16References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 25, 2002 |
| Grant date | Dec 21, 2004 |
| Priority date | — |
| Expiry date | Dec 31, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C15/04
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A Content Addressable Memory (CAM) cell with PFET passgate SRAM cells which results in a smaller cell size because of the more balanced number of 8 PFET devices and 8 NFET devices. The PFET passgates allow the size of the SRAM cell pulldown devices to be reduced, and lower the power dissipation in the SRAM during standby or during read/write.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.