Method and apparatus for mechanochemical polishing
US6835120B1 · kind B1 · utility
15Cited by
19References
17Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 13, 2000 |
| Grant date | Dec 28, 2004 |
| Priority date | — |
| Expiry date | Nov 13, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0475
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
In a mechanochemical polishing apparatus, a SiC wafer is held on a wafer holding table. The surface of the wafer to be polished is pressed against a polishing cloth applied to a polishing platen with a predetermined processing pressure. The wafer holding table and polishing platen are then rotated to perform polishing with chemical liquid dropped on the polishing cloth. The chemical liquid includes chromium (III) oxide as abrasive grains and hydrogen peroxide water (oxidizing agent) for improving polishing efficiency.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.