Thin film device with perpendicular exchange bias
US6835464B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 19, 2002 |
| Grant date | Dec 28, 2004 |
| Priority date | — |
| Expiry date | Jan 9, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/32
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A perpendicular exchange biased device comprises a layer of buffer material on a surface of a substrate, a layer of ferromagnetic material on a surface of the buffer layer, wherein the magnetization of the ferromagnetic layer lies in a direction perpendicular to the plane of the layer of ferromagnetic material, and a layer of antiferromagnetic material on a surface of the layer of ferromagnetic material. A method of making a perpendicular exchange biased device comprising positioning a layer of buffer material on a surface of a substrate, positioning a layer of ferromagnetic material on a surface of the layer of buffer material, wherein the magnetization of the ferromagnetic layer lies in a direction perpendicular to the plane of the layer of ferromagnetic material, and positioning a layer of antiferromagnetic material on a surface of the layer of ferromagnetic material is also included.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.