Tungsten plug with conductor capping layer
US6835649B2 · kind B2 · utility
7Cited by
8References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 3, 2002 |
| Grant date | Dec 28, 2004 |
| Priority date | — |
| Expiry date | Jun 3, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76877
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Within a method for forming a microelectronic fabrication there is provided a substrate having formed thereover a patterned dielectric layer which defines a via. There is also formed within a lower portion of the via a tungsten stud layer having a recess thereabove within the via. There is also formed within the recess a patterned conductor capping layer formed of a conductor material other than tungsten. The patterned conductor capping layer may seal a void formed within the tungsten stud layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.