Film forming method, semiconductor device and semiconductor device manufacturing method
US6835669B2 · kind B2 · utility
3Cited by
6References
7Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Jul 13, 2001 |
| Grant date | Dec 28, 2004 |
| Priority date | — |
| Expiry date | Jul 13, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a film forming method of forming an interlayer insulating film having a low dielectric constant for covering wiring. The insulating film covering wiring is formed on a substrate by converting into a plasma and reacting a film forming gas including a component selected from the group consisting of alkoxy compounds having Si—H bonds and siloxanes having Si—H bonds and an oxygen-containing gas selected from a group consisting of O2, N2O, NO2, CO, CO2, and H2O.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.