Selective oxidation for semiconductor device fabrication
US6835672B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 15, 1998 |
| Grant date | Dec 28, 2004 |
| Priority date | — |
| Expiry date | Oct 15, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02255
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An embodiment of the instant invention is a method of oxidizing a first feature (feature 108 and/or feature 104 of FIG. 1 and feature 314 of FIG. 3) while leaving a second feature substantially unoxidized (features 110 and 112 of FIG. 1 and features 310 and 312 of FIG. 3), the method comprised of subjecting the first and second features to an oxygen-containing gas and a separate hydrogen-containing gas. Preferably, the oxygen-containing gas is comprised of gas selected from the group consisting of O2, N2O, CO2, H2O, and any combination thereof, and the hydrogen-containing gas is comprised of H2. The first feature is, preferably, comprised of polycrystalline silicon, silicon oxide, or a dielectric material, and the second feature is, preferably, comprised of tungsten.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.