Method of forming a superconductor film
US6835696B2 · kind B2 · utility
11Cited by
2References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 6, 2002 |
| Grant date | Dec 28, 2004 |
| Priority date | — |
| Expiry date | Oct 2, 2022 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/568
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention provides methods forming the superconductor of as-grown film of MgB2 which is made with magnesium and boron ejected from a magnesium target and a boron target, respectively, each in simultaneously sputtering process. The as-grown film composed of a compound of magnesium and boron is a superconductor without being annealed. The present invention can be applied to fabricate an integrated circuit of superconductor film, because the high temperature annealing process for the as-grown film of MgB2 is unnecessary.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.