Split-channel high electron mobility transistor (HEMT) device

US6835969B1 · kind B1 · utility

Assignee

• Raytheon Company · US

Inventors

• Philbert Francis Marsh · Culver City, US
• Colin S. Whelan · Wakefield, US
• William E. Hoke · Wayland, US

Key dates

• Filing date: Jun 26, 2003
• Grant date: Dec 28, 2004
• Expiry date: Jun 26, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/4735

Abstract

A transistor structure having an gallium arsenide (GaAs) semiconductor substrate; a lattice match layer; an indium aluminum arsenide (InAlAs) barrier layer disposed over the lattice match layer; an InyGa1-yAs lower channel layer disposed on the barrier layer, where y is the mole fraction of In content in the lower channel layer; an InxGa1-xAs upper channel layer disposed on the lower channel layer, where x is the mole fraction of In content in the upper channel layer and where x is different from y; and an InAlAs Schottky layer on the InxGa1-xAs upper channel layer. The lower channel layer has a bandgap greater that the bandgap of the upper channel layer. The lower channel layer has a bulk electron mobility lower than the bulk electron mobility of the upper channel layer where.