Semiconductor device and its manufacture
US6835976B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 10, 2003 |
| Grant date | Dec 28, 2004 |
| Priority date | — |
| Expiry date | Jun 21, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/692
Abstract
A method of manufacturing a semiconductor device has the steps of: (a) forming a lower electrode made of rare metal above a semiconductor substrate; (b) depositing a capacitor dielectric film made of a high dielectric material or ferroelectric oxide on the lower electrode; (c) forming a laminated layer on the capacitor dielectric film, the laminated layer including an upper electrode layer made of rare metal and an adhesive layer with or without an SiO2 mask layer thoreon; (d) patterning the laminated layer; (e) chemically processing the patterned, laminated layer to remove a surface layer of the laminated layer; and (f) forming an interlayer insulating film over the semiconductor substrate, covering the chemically processed, laminated layer. An adhesion force between the rare metal layer and insulating layer can be increased.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.