Semiconductor light receiving element
US6835990B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 7, 2003 |
| Grant date | Dec 28, 2004 |
| Priority date | — |
| Expiry date | May 1, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B6/29361
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor light receiving element has a semiconductor portion. The semiconductor portion includes a substrate, a light detecting portion, and a filter portion. The substrate, the light detecting portion, and the filter portion are provided sequentially in a direction of a predetermined axis. The light detecting portion has a light absorbing layer including a III-V semiconductor layer, a window layer including a III-V semiconductor layer, and an anode semiconductor region. The light absorbing layer is an n or i conductivity type semiconductor layer. The light absorbing layer is provided between a III-V semiconductor layer and the window layer. The light detecting portion is provided on one face of the semiconductor substrate with the III-V semiconductor layer interposed therebetween. The filter portion includes InGaAsP semiconductor layers and III-V semiconductor layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.