Nonvolatile memory device having a voltage booster with a discharge circuit activated during standby
US6836442B2 · kind B2 · utility
1Cited by
4References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 7, 2003 |
| Grant date | Dec 28, 2004 |
| Priority date | — |
| Expiry date | Jul 7, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2207/2227
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A voltage booster device to selectively assume an active status and a stand-by status with a first terminal to assume a respective electric potential and associated to a first capacitor, a second terminal associated to a second capacitor and selectively connectable to the first terminal, and a discharge circuit for discharging the first capacitor thus reducing the electrical potential of the first terminal, the discharge circuit being activated when said device is in the stand-by status and the second terminal is disconnected from said first terminal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.