Semiconductor polysilicon component and method of manufacture thereof
US6838308B2 · kind B2 · utility
Assignees
Inventor
Key dates
| Filing date | May 14, 2001 |
| Grant date | Jan 4, 2005 |
| Priority date | — |
| Expiry date | Jul 23, 2021 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/16
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
On a transparent substrate, by use of, for instance, vapor deposition, an Al film is formed. Subsequently, with a DC-bias applied on a surface of the Al film, a first zinc oxide thin film is formed by use of a sputtering method. On a surface of the first zinc oxide thin film, according to an atmospheric MO-CVD method, a second zinc oxide thin film is formed. When the second zinc oxide thin film deposited by use of an MO-CVD method is formed on the first zinc oxide thin film having a-axis orientation, the second zinc oxide thin film becomes to have the a-axis orientation. Since the Al thin film, owing to heat during the deposition by use of the MO-CVD method, is absorbed in the first zinc oxide thin film, the transparency is improved. As a result, a sample having a ZnO/ZnO/Al/glass structure becomes high in the transparency as a whole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.