Method for manufacturing semiconductor device having insulating film with N—H bond
US6838327B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 27, 2003 |
| Grant date | Jan 4, 2005 |
| Priority date | — |
| Expiry date | Feb 27, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28202
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a gate insulating film formed on a silicon substrate, a gate electrode formed on the gate insulating film, and an electrical insulating film formed on the gate electrode. The electrical insulating film includes a N—H bond and substantially no Si—H bond. The electrical insulating film is formed by using tetrachlorosilane (SiCl4) that contains no hydrogen (H) as a source gas for a silicon nitride film. Thus, the semiconductor device can suppress residual hydrogen in the gate insulating film and prevent interface defects of the gate insulating film, a shift in the threshold voltage of a transistor, and the degradation of an on-state current. A method for manufacturing the semiconductor device also is provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.