Avalanche photodiode for use in harsh environments

US6838741B2 · kind B2 · utility

Assignee

• General Electric Company · US

Inventors

• Peter Sandvik · Niskayuna, US
• Dale M. Brown · Schenectady, US
• Stephen Daley Arthur · Glenville, US
• Kevin Sean Matocha · Rexford, US
• James William Kretchmer · Ballston Spa, US

Key dates

• Filing date: Dec 10, 2002
• Grant date: Jan 4, 2005
• Expiry date: Dec 10, 2022

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/544

Abstract

An aspect of the present invention is directed to an avalanche photodiode (APD) device for use in oil well drilling applications in harsh, down-hole environments where shock levels are near 250 gravitational acceleration (G) and/or temperatures approach or exceed 150° C. Another aspect of the present invention is directed to an APD device fabricated using SiC materials. Another aspect of the present invention is directed to an APD device fabricated using GaN materials. According to an embodiment of the present invention, an avalanche photodiode for detecting ultraviolet photons comprises a substrate having a first dopant; a first layer having the first dopant, positioned on top of the substrate; a second layer having a second dopant, positioned on top of the first layer; a third layer having a second dopant, positioned on top of the second layer; a passivation layer for providing electrical passivation on a surface of the avalanche photodiode; a phosphorous silicate glass layer for limiting mobile ion transport, positioned on top of the third layer; and a pair of metal electrodes for providing an ohmic contact wherein a first electrode is positioned below the substrate and a second…