Optoelectronic device using a disabled tunnel junction for current confinement
US6839370B2 · kind B2 · utility
2Cited by
3References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 31, 2001 |
| Grant date | Jan 4, 2005 |
| Priority date | — |
| Expiry date | Oct 15, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8162
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An optoelectronic device such as a vertical cavity surface emitting laser (VCSEL) includes a tunnel junction that conducts a current of holes tunneling into an active region. Tunneling in a selected area of the tunnel junction is disabled to form a current blocking region that confines the current to desired regions. Tunneling can be disabled in the selected area using techniques including but not limited to implanting or diffusing dopants, disrupting crystal structure, or etching to remove part of the tunnel junction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.