Combined single-frequency laser and linear amplifier
US6839371B1 · kind B1 · utility
0Cited by
6References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 1, 2000 |
| Grant date | Jan 4, 2005 |
| Priority date | — |
| Expiry date | May 1, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/1243
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser device includes a substrate having on a surface thereof a semiconductor diode laser portion and a linear amplifier portion. Each of the laser portion and amplifier portion has a waveguide layer with the waveguide layers being in alignment. The laser portion is of a structure which permits it to generate radiation and emit the radiation from one end. The amplifier has an end that receives the radiation from the laser portion, and another end with emits the radiation after the radiation is amplified. The device emits FM radiation but not IM radiation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.