Method for cleaning a semiconductor device
US6840249B2 · kind B2 · utility
2Cited by
2References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 26, 2002 |
| Grant date | Jan 11, 2005 |
| Priority date | — |
| Expiry date | Mar 5, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/906
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In order to clean a semiconductor device having a dielectric layer deposited on a top surface of a lower metal wiring of the semiconductor device, and a contact hole or a via hole formed in the dielectric layer to expose the lower metal line therethrough, the semiconductor device is located within a radio frequency (RF) cleaning chamber. A gas mixture of HCl and H2O is introduced into the RF cleaning chamber and Ar gas plasma is generated in the RF cleaning chamber to excite HCl gas so that the HCl gas and an excited HCl gas are used to remove carbon radicals and metal particles.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.