Levenson phase shift mask and method for forming fine pattern by using the same
US6841318B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 22, 2002 |
| Grant date | Jan 11, 2005 |
| Priority date | — |
| Expiry date | Mar 14, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/36
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Levenson masks capable of minimizing the effect of optical proximity, and a method for forming a fine pattern using such Levenson masks wherein the Levenson masks have patterns where shielding regions are sandwiched between shifter regions and non-shifter regions respectively. The shifter regions and the non-shifter regions are formed to have predetermined shapes to minimize the effect of optical proximity. Specifically, aperture widths, which are defined as widths of the shifter regions and widths of the non-shifter regions perpendicular to the longitudinal directions of the linear shielding regions, are of a predetermined width for minimizing the effect of optical proximity. The Levenson masks have patterns different from each other and are used for multiple exposures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.