Method of manufacturing a semiconductor device having a silicide film
US6841429B2 · kind B2 · utility
4Cited by
10References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 19, 2003 |
| Grant date | Jan 11, 2005 |
| Priority date | — |
| Expiry date | Nov 19, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is disclosed. The device includes a semiconductor region and P-type and N-type diffusion layers formed in the semiconductor region. The semiconductor region includes a germanium low-concentration region containing germanium of low concentration and a germanium high-concentration region containing germanium of high concentration. A boundary region between the P-type and N-type diffusion layers lies in the germanium high-concentration region. A silicide film is formed to extend from the P-type diffusion layer over to the boundary region and the N-type diffusion layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.