Method of fabricating semiconductor device
US6841434B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 25, 2003 |
| Grant date | Jan 11, 2005 |
| Priority date | — |
| Expiry date | Mar 25, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6741
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The objective of the invention is to provide a method of fabricating semiconductor device using a laser crystallization method capable of preventing a grain boundary from being formed on the channel-forming region of a TFT and preventing the mobility of the TFT from extremely deteriorating, on-current from decreasing, or off-current from increasing due to a grain boundary and a semiconductor device fabricated by the fabrication method. Striped (banded) or rectangular concave and convex portions are formed. Then, a semiconductor film formed on an insulating film is irradiated with a laser beam diagonally to the longitudinal direction of concave and convex portions on the insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.