Power semiconductor device
US6841866B2 · kind B2 · utility
7Cited by
4References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 10, 2003 |
| Grant date | Jan 11, 2005 |
| Priority date | — |
| Expiry date | Feb 26, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/931
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A power semiconductor device includes a portion and an external package enclosing the portion. The portion includes a ceramic board sides provided on the ceramic board defining a space filled with a thermal insulator, and a silicon carbide power semiconductor element enclosed within the thermal insulator. The external package is made of a material having a thermal conductivity lower than that of the side.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.