Patent · US Expired

High-voltage CMOS-compatible capacitors

US6842327B1 · kind B1 · utility

25Cited by
12References
89Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 5, 2003
Grant dateJan 11, 2005
Priority date
Expiry dateAug 5, 2023

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D30/68

Abstract

A high-voltage stacked capacitor includes a first capacitor and a second capacitor. Each capacitor includes a first plate comprising a first semiconductive body and a second plate comprising a floating electrode. The first and second semiconductor bodies are electrically isolated from each other. The floating electrode includes an intercapacitor node configured to self-adjust to a value less than a working voltage impressed on the stacked capacitor.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.