High-voltage CMOS-compatible capacitors
US6842327B1 · kind B1 · utility
25Cited by
12References
89Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 5, 2003 |
| Grant date | Jan 11, 2005 |
| Priority date | — |
| Expiry date | Aug 5, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/68
Abstract
A high-voltage stacked capacitor includes a first capacitor and a second capacitor. Each capacitor includes a first plate comprising a first semiconductive body and a second plate comprising a floating electrode. The first and second semiconductor bodies are electrically isolated from each other. The floating electrode includes an intercapacitor node configured to self-adjust to a value less than a working voltage impressed on the stacked capacitor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.